Mathematical model of the process of creating film resistors with a Ni-P resistive layer

Abstract

The authors created a convenient and easy to use tool for calculating basic Ni-P resistive layer parameters, namely surface resistance and TCR of test resistor, based on chemical metallization parameters. The program allows calculating basic values characterizing the technological process of Ni-P resistive layer formation by means of chemical metallization. The values are temperature and acidity of the metallization bath. The values are calculated for a given level of surface resistance of Ni-P resistive layer and defined required range of changes of TCR of test resistor with the Ni-P layer. The calculations are possible for surface resistance values in the range of 0.5 Ω/□ □ 2.5 Ω/□. As the program was developed on the basis of experimental data, parameters of resistors produced using the mathematical model are in practice coherent with expected results. The best coherence is achieved for simultaneous simulation of surface resistance and TCR. Very good results are also obtained if one wants to use a metallization bath of a temperature from the (333÷353) K range in order to obtain the required resistor parameters.