Evolution of relief of asperited polycrystalline silicon surface in the process of thermal oxidation

2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat Pub Date : 2000-09-26 DOI:10.1109/APEIE.2000.913080

G.V. Perov, E. G. Salman, A. Ignatov

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Abstract

A simple phenomenological model of changing asperity surface, in the process of thermal oxidation of polycrystalline silicon, is examined. This allows to prognosticate and consequently deliberately change electrical characteristics of the dielectric layer.

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热氧化过程中多晶硅表面凹凸度的演变

研究了多晶硅热氧化过程中粗糙表面变化的简单现象学模型。这允许预测并因此有意地改变介电层的电特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat

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