On-wafer wideband characterization of advanced MOS technologies

Abstract

A full frequency band analysis is precious for separating physical phenomena taking place in MOS devices. Based on the extraction of a wideband equivalent small-signal circuit, various MOS technologies can be fairly compared and compact models with increase validity domain can be established. The extracted values for the various parameters constituting the electrical equivalent circuit of a particular device are useful not only for integrated circuit designers but also for the engineers at the early stage of the technology development. In this paper, the wideband characterization of several advanced MOS transistors is presented and discussed