Characterization of low frequency noise in InGaAs-channel heterojunction-FET's and GaAs-JFET's at liquid helium temperature

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791615

I. Hosako, K. Okumura, M. Akiba, N. Hiromoto

引用次数: 1

Abstract

This paper examines InGaAs-channel heterojunction-FETs (HJ-FETs) and GaAs-JFETs for their low-noise and low-power characteristics at 4.2 K. We demonstrated that Hooge's empirical relation applies to a FET with long gate.

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液态氦温度下ingaas沟道异质结fet和GaAs-JFET低频噪声的表征

本文研究了ingaas沟道异质结fet (hj - fet)和gaas - jfet在4.2 K下的低噪声和低功耗特性。我们证明了Hooge的经验关系适用于长栅极场效应管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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