Exposure field matching of multiple step-and-scan systems to multiple step-and-repeat systems

J. Pellegrini, J. Sturtevant, K. Green, P. Becher
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引用次数: 1

Abstract

The introduction of DUV step-and-scan exposure tools into a mix-and-match manufacturing environment with traditional i-line step-and-repeat systems has presented many unique challenges to lithographic process engineers. One of these challenges has been the development of a reliable method for characterizing and optimizing intrafield pattern overlay registration. A method is proposed here that utilizes metrology and analysis techniques that have been proven for traditional homogeneous manufacturing environments. Enhancements to these traditional techniques that are designed to manage the special circumstances related to heterogeneous system matching between step-and-scan and step-and-repeat systems are described. Particular attention is paid to the characterization of the A-B-C matching of exposure field (lens) signatures. Results of this method applied to a representative manufacturing environment are presented and discussed.
多个步进扫描系统与多个步进重复系统的曝光场匹配
将DUV步进扫描曝光工具引入传统的i线步进重复系统的混合匹配制造环境中,给光刻工艺工程师带来了许多独特的挑战。其中一个挑战是开发一种可靠的方法来表征和优化场内图案覆盖配准。这里提出了一种方法,利用计量和分析技术,已经证明了传统的同质制造环境。本文描述了对这些传统技术的增强,这些技术旨在管理与步进扫描和步进重复系统之间的异构系统匹配相关的特殊情况。特别注意曝光场(透镜)特征的A-B-C匹配的表征。最后给出并讨论了该方法在典型制造环境中的应用结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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