Highly reliable high-temperature superplastic Al-Zn eutectoid solder joining with stress relaxation characteristics for next generation SiC power semiconductor devices
J. Onuki, A. Chiba, M. Kawakami, Kunihiro Tamahashi, Y. Sugawara, T. Inami, M. Kobiyama, Y. Motohashi, Yuji Kawamata
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引用次数: 2
Abstract
A new high-temperature lead-free solder joint which withstands temperatures up to 300°C and utilizes superplasticity in an Al-Zn eutectoid alloy has been developed to realize SiC power semiconductor devices. The joining process consists of interfacial cleaning of the joint formed utilizing superplasticity of the Al-Zn-eutectoid alloy at 250°C followed by bonding in the solid-liquid coexisting temperature range in order to control microstructures and to reduce occurrence of voids. The developed SiC/SiN substrate joints with void-free and stress relaxation effects show outstanding reliability in temperature cycle tests from −40°C to 300°C for 5000 cycles.