Highly reliable high-temperature superplastic Al-Zn eutectoid solder joining with stress relaxation characteristics for next generation SiC power semiconductor devices

J. Onuki, A. Chiba, M. Kawakami, Kunihiro Tamahashi, Y. Sugawara, T. Inami, M. Kobiyama, Y. Motohashi, Yuji Kawamata
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引用次数: 2

Abstract

A new high-temperature lead-free solder joint which withstands temperatures up to 300°C and utilizes superplasticity in an Al-Zn eutectoid alloy has been developed to realize SiC power semiconductor devices. The joining process consists of interfacial cleaning of the joint formed utilizing superplasticity of the Al-Zn-eutectoid alloy at 250°C followed by bonding in the solid-liquid coexisting temperature range in order to control microstructures and to reduce occurrence of voids. The developed SiC/SiN substrate joints with void-free and stress relaxation effects show outstanding reliability in temperature cycle tests from −40°C to 300°C for 5000 cycles.
具有应力松弛特性的高可靠高温超塑Al-Zn共晶焊料连接新一代SiC功率半导体器件
利用Al-Zn共晶合金的超塑性,研制了一种可承受300℃高温无铅焊点,可实现SiC功率半导体器件。连接过程包括在250°C时利用al - zn共晶合金的超塑性对接头进行界面清洗,然后在固液共存温度范围内结合,以控制组织并减少空洞的产生。开发的SiC/SiN衬底接头具有无空洞和应力松弛效应,在−40°C至300°C的5000次循环温度循环试验中表现出出色的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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