Properties of Cu2ZnSnS4 films elaborated by modified spray process

2016 International Renewable and Sustainable Energy Conference (IRSEC) Pub Date : 2016-11-01 DOI:10.1109/IRSEC.2016.7983950

Samira Bouzida, E. Benamar, M. Battas, Z. Laghfour, Z. Sekkat, A. Slaoui, M. Abd-lefdil, M. Regragui

引用次数: 3

Abstract

By spray assisted chemical vapor deposition process, we have elaborated Cu2ZnSnS4 thin films at various deposition temperatures without any sulfurization treatment. The (112) preferential orientation was showed by X-ray diffraction. Raman spectroscopy confirmed the CZTS kesterite structure. Band gap values ranging from 1.35 eV to 1.5 eV were obtained by optical measurements.

查看原文本刊更多论文

改性喷涂工艺制备Cu2ZnSnS4薄膜的性能

采用喷雾辅助化学气相沉积法，在不同沉积温度下制备了Cu2ZnSnS4薄膜，而无需进行任何硫化处理。x射线衍射结果表明(112)的择优取向。拉曼光谱证实了CZTS kesterite的结构。通过光学测量获得了1.35 ~ 1.5 eV的带隙值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2016 International Renewable and Sustainable Energy Conference (IRSEC)

自引率

0.00%

发文量