High-resistivity silicon photodiode arrays for x-ray detection

Abstract

Presented is a method to build silicon multi-pixel x-ray detectors for use on the Argonne National Laboratory's Advanced Photon Source x-ray synchrotron. These detectors are PIN diodes constructed using heavily doped oxide sources. The construction method chosen helps reduce the background leakage current and allows for a minimum of process steps. We discuss test results of the characterization of the sensors.