Integral Equation Analysis of Multiport H-plane Devices Containing Arbitrarily Shaped Metallic and/or Dielectric Posts by Using Two-Dimensional Cavity and Parallel Plate Green's Functions

F. Quesada, Celia Gómez, Alejandro Álvarez Melcón, V. Boria, M. Guglielmi
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Abstract

In this work, we propose a novel integral equation formulation that allows the efficient analysis of multiport H-plane microwave devices including arbitrarily shaped metallic and/or dielectric posts. The system of integral equation that models a given H-plane microwave device is written in terms of mixed-potentials, whose unknowns are equivalent electric $\vec{J}$ or magnetic $\vec{M}$ surface current densities. These unknown currents are defined, after the aplication of the Surface Equivalence Principle, on the discontinuities between the input and output waveguide ports and a rectangular cavity, as well as on the dielectric and/or metallic posts contour. The, so called, original problem is split into several equivalent problems, defined in different regions, that are coupled each other by the aforementioned unknown surface current densities. The kernel of the integral equation is expressed making used of Green's functions that takes into account the boundary conditions corresponding to the region where the considered equivalent problem is defined; namely, parallel plate Green's functions, 2D rectangular cavity Green's functions or unbounded medium Green's functions. Series acceleration techniques such as the Kummer's transformation and the Ewald method has been employed in order to improve the efficiency when computing the parallel plate and 2D rectangular cavity Green's functions. Two simulation examples are presented, comparing the results provided by the novel integral equation technique to those retrieved with a finite elements software tool (ANSYS HFSS). A very good agreement between both method has been obtained, showing the accuracy and efficiency of the technique proposed in this contribution.
利用二维空腔和平行板格林函数分析含任意形状金属柱或介电柱的多端口h平面器件的积分方程
在这项工作中,我们提出了一种新的积分方程公式,可以有效地分析多端口h平面微波器件,包括任意形状的金属和/或介电柱。用混合势表示h平面微波器件的积分方程组,其未知量为等效电$\vec{J}$或磁$\vec{M}$表面电流密度。在应用表面等效原理后,这些未知电流在输入和输出波导端口与矩形腔之间的不连续处以及电介质和/或金属柱轮廓上被定义。所谓的原始问题被分成几个等效的问题,这些问题被定义在不同的区域,它们通过上述未知的表面电流密度相互耦合。利用格林函数表示积分方程的核,该函数考虑了所考虑的等效问题定义区域对应的边界条件;即平行板格林函数、二维矩形空腔格林函数或无界介质格林函数。为了提高计算平行板和二维矩形腔格林函数的效率,采用了Kummer变换和Ewald法等级数加速技术。给出了两个仿真实例,并将积分方程技术的计算结果与有限元软件ANSYS HFSS的计算结果进行了比较。两种方法之间的一致性非常好,表明了本文所提出的技术的准确性和效率。
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