Vdd impact on propagation pulse width variation in PD SOI circuits

B. Min, G. Workman, D. Chang, O. Zia, Y. Yu, R. Widenhofer, B. Simon, N. Cave, H. Sanchez, S. Veeraraghavan, M. Mendicino, B. Yeargain
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Abstract

Pulse width variation through open-ended chains in partially depleted SOI is investigated. Vdd impact on the pulse variation (either compression or stretching) is intensively studied, as well as temperature and illumination contributions. A physical model using well-known capacitive coupling, generation, and recombination concepts is proposed with experimental data.
Vdd对PD SOI电路中传播脉宽变化的影响
研究了部分耗尽SOI中开放式链的脉宽变化。Vdd对脉冲变化(压缩或拉伸)的影响以及温度和光照的影响被深入研究。利用众所周知的电容耦合、产生和重组概念,利用实验数据提出了一个物理模型。
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