{"title":"X-pinch soft x-ray source for microlithography","authors":"S. Glidden, D. Hammer, D. Kalantar, N. Qi","doi":"10.1063/1.103948","DOIUrl":null,"url":null,"abstract":"The x-pinch soft x-ray source is described for application in submicron resolution lithography. Experiments have been performed to characterize the radiation emitted from magnesium wire x-pinch plasmas using an 80 ns, ≤500 kA pulse. Yields of 14.2 J averaged over three independent calibrated diagnostics at 445 kA have been measured in magnesium K-shell radiation (predominantly 8.4 Å to 9.4 Å or 1.5 keV to 1.3 keV) from a submillimeter source, with as little as 5-10% of the yield below the 6.74 Â silicon absorption edge. A new ≤700 kA, 100 ns puiser being used for x-pinch physics experiments is described. The design of a 40 pulse per second pulsed power system and wire loading mechanism for exposing a resist in 1 second at a distance of 40 cm is presented.","PeriodicalId":241775,"journal":{"name":"1992 9th International Conference on High-Power Particle Beams","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 9th International Conference on High-Power Particle Beams","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.103948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29
Abstract
The x-pinch soft x-ray source is described for application in submicron resolution lithography. Experiments have been performed to characterize the radiation emitted from magnesium wire x-pinch plasmas using an 80 ns, ≤500 kA pulse. Yields of 14.2 J averaged over three independent calibrated diagnostics at 445 kA have been measured in magnesium K-shell radiation (predominantly 8.4 Å to 9.4 Å or 1.5 keV to 1.3 keV) from a submillimeter source, with as little as 5-10% of the yield below the 6.74 Â silicon absorption edge. A new ≤700 kA, 100 ns puiser being used for x-pinch physics experiments is described. The design of a 40 pulse per second pulsed power system and wire loading mechanism for exposing a resist in 1 second at a distance of 40 cm is presented.