A Controlled-Avalanche Superlattice Transistor

Abstract

A novel n-p-n bipolax avalanche transistor is demonstrated. Controlled avalanche and large current output is achieved by incorporating in the collector junction a few periods of a symmet- ric or asymmetric multi-quantum well in which only electrons predominanttly multiply. The theory of operation, materials growth by molecular beam epitaxy, impact ionization data in the quantum wells and device performance are described. Optical gains as high as 140 are measured in these transistors.