Characterization of power MOSFETs in high commutation level

Abstract

An experimental method for the characterization and modeling of power MOS switching transistors is presented. The method provides a simple but accurate characterization of MOSFETs without the need to know any technological parameter. The accuracy of the model, which has been implemented in the SPICE program, is confirmed by the good agreement between computer simulation and experimental results. The modeling technique is very useful for the precise analysis and design of high-efficiency power converters and switching power amplifiers, and has been applied to a quasi-resonant high-frequency converter that uses a MOSFET, with excellent results.<>