K. Kishine, H. Inaba, Y. Ohtomo, M. Nakamura, Mitsuo Nakamura
{"title":"Design method for an over-IO-Gb/s CMOS CML buffer circuit for delay control","authors":"K. Kishine, H. Inaba, Y. Ohtomo, M. Nakamura, Mitsuo Nakamura","doi":"10.1109/MWSCAS.2012.6292092","DOIUrl":null,"url":null,"abstract":"A design method for an over-lOG-b/s buffer circuit for generating precise delay is proposed. A simple small-signal equivalent circuit model is introduced to investigate the delay characteristics of a current mode logic (CML) buffer circuit with load resistances. By setting the transconductance generator gm and output resistance in a MOSFET model as a function of drain current, the design equations for the delay and gain are derived. To confirm the validity of the design method, we fabricated buffer chain IC with the 65nm-MOSFET process and compared the measured and estimated delay. The errors between the measured and estimated delay are less than 15%, confirming the validity of the method.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2012.6292092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A design method for an over-lOG-b/s buffer circuit for generating precise delay is proposed. A simple small-signal equivalent circuit model is introduced to investigate the delay characteristics of a current mode logic (CML) buffer circuit with load resistances. By setting the transconductance generator gm and output resistance in a MOSFET model as a function of drain current, the design equations for the delay and gain are derived. To confirm the validity of the design method, we fabricated buffer chain IC with the 65nm-MOSFET process and compared the measured and estimated delay. The errors between the measured and estimated delay are less than 15%, confirming the validity of the method.