Design method for an over-IO-Gb/s CMOS CML buffer circuit for delay control

K. Kishine, H. Inaba, Y. Ohtomo, M. Nakamura, Mitsuo Nakamura
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引用次数: 1

Abstract

A design method for an over-lOG-b/s buffer circuit for generating precise delay is proposed. A simple small-signal equivalent circuit model is introduced to investigate the delay characteristics of a current mode logic (CML) buffer circuit with load resistances. By setting the transconductance generator gm and output resistance in a MOSFET model as a function of drain current, the design equations for the delay and gain are derived. To confirm the validity of the design method, we fabricated buffer chain IC with the 65nm-MOSFET process and compared the measured and estimated delay. The errors between the measured and estimated delay are less than 15%, confirming the validity of the method.
超io - gb /s CMOS CML延迟控制缓冲电路的设计方法
提出了一种产生精确延迟的超对数b/s缓冲电路的设计方法。介绍了一种简单的小信号等效电路模型,用于研究带负载电阻的电流模式逻辑(CML)缓冲电路的延迟特性。通过在MOSFET模型中设置跨导发生器的gm和输出电阻作为漏极电流的函数,推导出延迟和增益的设计方程。为了验证设计方法的有效性,我们采用65nm-MOSFET工艺制作了缓冲链IC,并比较了测量和估计的延迟。实测时延与估计时延误差小于15%,验证了该方法的有效性。
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