Sputtering (103) Oriented AlN and its SAW Properties Analysis

Abstract

In this research, the (103) oriented AIN films were successfully sputtered on silicon to be a new composite surface acoustic wave (SAW) substrate. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the Full-Width Half-Maximum (FWHM) value of the (103) XRD peak was 0.288deg. The SAW properties of the (103) oriented AIN films on silicon had been theoretically analyzed. The simulation results showed the maximum Rayleigh velocity was about 5626 m/s and the maximum electromechanical coupling constant (K) was about 0.61%. It was found those SAW parameters of the (103)AlN/Si structure surpassed the ones of the (002)AlN/Si structure. The (103) oriented AIN films on silicon is a promising candidate applicable for the design of SAW devices.