Effects of the Gate Dielectric Material on the Performance of a 14-nm SOI FinFET

Abstract

Fin field-effect transistors (FinFETs) are a type of device that has received great attention in recent years, owing to their ability to scale down, low cost, and high efficiency for advanced chip technology. In order to contribute to the study of the FinFET architecture, a three-dimensional (3D) silicon-on-insulator(SOI) n-FinFET device is developedand calibrated to IBM’s measured model. This paper is focused on investigating the influence of the gate dielectric material on the device RF parameters, such as transconductance, gate capacitance, and cut-off frequency. The achieved results demonstrate the positive effect of using a high-k material as a single layer between the gate contact and the channel. Thestudied device with a titanium dioxide (TiO2) gate dielectric allows achieving superior gate controllability compared to the low-k dielectric materials. In particular, the reported analysis leads to achieving a transconductance of 37.6µS and a cut-off frequency of 4.48THz at Vds=0.05V with Vgs=0.24V and Vgs=0.2V, respectively, by considering TiO2 as the gate dielectric material.