A method of obtaining high quantum efficiency in uncooled LWIR HgCdTe photodetectors

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-08-18 DOI:10.1109/NUSOD.2016.7547016

M. Kopytko, A. Jóźwikowska, K. Jóźwikowski, P. Martyniuk, M. Nietopiel

引用次数: 0

Abstract

We have proposed the method to obtain high effective quantum efficiency in uncooled LWIR HgCdTe photodiodes. We have designed the stacked multi junction photodiodes working in non-equilibrium conditions. The effective quantum efficiency being the product of quantum efficiency and photoelectrical gain can achieve significant values, much greater than 100%, when the structure is reverse biased.

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一种获得非冷却LWIR HgCdTe光电探测器高量子效率的方法

我们提出了在非冷却的低波长红外高碲化镉光电二极管中获得高效量子效率的方法。我们设计了在非平衡条件下工作的堆叠式多结光电二极管。有效量子效率是量子效率与光电增益的乘积，当结构反向偏置时，有效量子效率可以达到显著值，远大于100%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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