{"title":"A 443-µA 37.8-nV/√Hz CMOS multi-stage bandgap voltage reference","authors":"W. Yan, T. Christen","doi":"10.1109/ESSCIRC.2013.6649080","DOIUrl":null,"url":null,"abstract":"A CMOS bandgap voltage reference is presented, which achieves a low integrated noise of 150nVrms within a 0.1-10Hz bandwidth and a 37.8nV/√Hz wideband noise floor above 100Hz. The low noise performance is accomplished by employing a multi-stage bandgap topology, which results in an inherent noise advantage compared to a conventional CMOS bandgap. Fabricated in a 0.35μm HV CMOS technology, the bandgap voltage reference consumes 443μA from a nominal 3.4-V supply and occupies 0.5mm2 chip area.","PeriodicalId":183620,"journal":{"name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2013.6649080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A CMOS bandgap voltage reference is presented, which achieves a low integrated noise of 150nVrms within a 0.1-10Hz bandwidth and a 37.8nV/√Hz wideband noise floor above 100Hz. The low noise performance is accomplished by employing a multi-stage bandgap topology, which results in an inherent noise advantage compared to a conventional CMOS bandgap. Fabricated in a 0.35μm HV CMOS technology, the bandgap voltage reference consumes 443μA from a nominal 3.4-V supply and occupies 0.5mm2 chip area.