Computing-in-Memory with SuperFlash® memBrain™ Technology

Nhan Do, H. Tran, M. Reiten
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引用次数: 2

Abstract

The concept and experimental result of using SuperFlash® based neuromorphic memory to solve the data communication bottlenecks in neural network edge devices are discussed. The implementation of a 2Mb memory array as an analog vector matrix multiplier (VMM) in a 28 nm SuperFlash® eFlash (ESF3-28 nm) process together with design concepts, weight tuning technique, performance factors, and reliability, are also presented in detail.
使用SuperFlash®memBrain™技术进行内存计算
讨论了利用基于SuperFlash®的神经形态存储器解决神经网络边缘设备数据通信瓶颈的概念和实验结果。在28纳米SuperFlash®eFlash (ESF3-28纳米)工艺中实现2Mb存储器阵列作为模拟向量矩阵乘法器(VMM),并详细介绍了设计概念、权重调谐技术、性能因素和可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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