Impact of light quantum in Rapid Photothermal Diffusion of Zn IN GaAs

Abstract

The experimental results of the Rapid Photothermal Diffusion (RPD) of Zn in GaAs and p-n junction formation, model and role of quantum factor in this process are presented in this paper. The p-n junctions with depth of 0.2 – 1.2µm have been obtained by RPD at 600–950°C for 6 – 60s diffusion time for solar cells and microelectronic application. The diffusion coefficients and activation energies of the RP-enhanced diffusion at low (N0<4×10¹⁹cm⁻³) and high (N0>1×10²⁰cm⁻3) concentrations of Zn in GaAs were analysed. The activation energy of RP- diffusion is lower than that of the conventional furnace diffusion and diffusion coefficient is higher by 1–2 orders of magnitude. The proposed model and calculated wavelength dependence of RP-diffusion coefficient, D(λ), are in accordance with experimental results.