An accurate threshold voltage model for nanoscale GCGS VSG MOSFET

Abstract

in this paper, an accurate analytical threshold voltage model based on terms of surface potential is presented to study the scaling capability of nanoscale graded channel gate stack vertical surrounding gate (GCGS VSG MOSFET). Explicit approximate relations of surface potential and threshold voltage as function of device parameters are developed. The developed model is verified by its good agreement with the numerical simulations.