High Q, Compact Photonic Crystal Nanobeam Cavity for an Active Device Platform in a CMOS Silicon Photonics Process

Abstract

We demonstrate a high Q, compact photonic crystal nanobeam cavity in the new 45 nm GlobalFoundries 45CLO monolithic electronics-photonics platform optimized for silicon photonics - with an intrinsic Q of 134,000, FSR of 24.17 nm, and a theoretical Q/V of 2.2×105(λ/n)-3.