Channel filters for microelectronic receivers of wireless systems

Alexander S. Korotkov, Dmitry V. Morozov, A. Tutyshkin, Hans Hauer
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引用次数: 10

Abstract

A short overview of receiver architectures and low-pass filter specifications for wireless systems is reported. Two design procedures of low-pass filters for communication system are discussed. A CMOS transconductance-capacitor (G/sub m/-C) filter with enhanced linearity is presented as the first one. The proposed design is based on a transconductance amplifier with enhanced linearity. For the elimination of the amplifier harmonic level the compensation principle is used. The device was realized as a balanced fifth-order 1 MHz low-pass Bessel filter in 0.35 /spl mu/m CMOS process. The filter operates with a low supply voltage of +2.5 Volt. Its power consumption is 8.25 mW, the input referred RMS noise is 120 /spl mu/V (0.01 + 2 MHz), and HD3 (1 V/sub P-to-P/ @ 1 MHz) is -54 dB. Alternatively a new approach to the design of high-frequency filters with low power consumption is presented. The idea is to use current mode and voltage mode active elements with enhanced frequency range. These elements are second generation current conveyors and voltage buffers, those are used to implement integrators. The filter is realized as a switched-capacitor circuit based on an integrator chain with multi feedback loops. As an example a CMOS switched-capacitor filter with 1 MHz cut-off frequency is presented. The device was realized as an unbalanced fifth-order low-pass Chebyshev filter in 03 /spl mu/m CMOS process. The filter operates with supply voltage varying from +2.5 V to +3 V. Depending on the supply voltage its power consumption is from 3 mW to 10 mW, the input referred RMS noise is 1.9 mV (0.02 + 2 MHz @ +3 V), and HD3 (2 V/sub P-to-P/ @ 900 kHz @ +3 V) is -54 dB.
无线系统微电子接收机用信道滤波器
简要概述了无线系统的接收器架构和低通滤波器规格。讨论了通信系统低通滤波器的两种设计方法。提出了一种具有增强线性度的CMOS跨导电容(G/sub / c)滤波器。提出的设计是基于一个跨导放大器与增强线性。为了消除放大器的谐波电平,采用了补偿原理。该器件在0.35 /spl mu/m CMOS工艺下实现为平衡五阶1mhz低通贝塞尔滤波器。该滤波器在+2.5伏的低电源电压下工作。其功耗为8.25 mW,输入参考RMS噪声为120 /spl mu/V (0.01 + 2 MHz), HD3 (1 V/sub P-to-P/ @ 1 MHz)为-54 dB。此外,本文还提出了一种设计低功耗高频滤波器的新方法。这个想法是使用电流模式和电压模式有源元件与增强的频率范围。这些元件是第二代电流传送带和电压缓冲器,用于实现积分器。该滤波器是基于多反馈环积分器链的开关电容电路。以截止频率为1mhz的CMOS开关电容滤波器为例。该器件在03 /spl mu/m CMOS工艺下实现为非平衡五阶低通切比雪夫滤波器。滤波器工作时电源电压从+2.5 V到+ 3v不等。根据电源电压的不同,其功耗从3 mW到10 mW,输入参考RMS噪声为1.9 mV (0.02 + 2 MHz @ +3 V), HD3 (2 V/sub P-to-P/ @ 900 kHz @ +3 V)为-54 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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