Review article on analytical models for single gate and double gate MOSFETs in subthreshold regime

Abstract

In this review paper, various articles published in the last few years related to analytical models for Short Channel Effects (SCEs) in MOSFETS have been reviewed. In the first half of the paper, single gate MOSFET models have been examined which have been broadly classified into five categories namely a) charge sharing models, b) empirical SCE models, c) polynomial potential models, d) analytical models to 2-D Poisson's equation and e) voltage doping transformation (VDT) models. Limitations of the various available models in these categories have been highlighted. In the second half of the paper double gate MOSFET models based on a) 1-D Poisson's Equation b) 2-D Poisson's Equation and c) voltage doping transformation (VDT) have been detailed along with the limitations of each of these.