Low Power Device Phase Locked Loop with Gm-Boosted Charge Pump and ESD Protection

W. Lai, Wei-Te Liu, Yan-Cu Lin, S. Jang
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引用次数: 1

Abstract

This article presents a low consumption phase locked loop (PLL) with electrostatic discharge (ESD) and use gain-boosted charge pump organization and a divided by 48 pulse swallow dividers. By gain-boosted technique can efficient to reduce the PLL reference spurs. The PLL consume of power is 6mW from 1.8V souring. The phase noise of the PLL is - 86.71 dBc/Hz at 1MHz offset and spurs are -32.64 dB. The PLL fully integrated and processing in UMC 0.18μm and it occupies 698μm×848μm active chipset area.
低功率器件锁相环与gm增压电荷泵和ESD保护
本文提出了一种低功耗锁相环(PLL),采用静电放电(ESD)和增益增强电荷泵组织,由48个脉冲吞分器分开。增益增强技术可以有效地减小锁相环参考杂散。锁相环在1.8V电压下的功耗为6mW。锁相环在1MHz偏置时相位噪声为- 86.71 dBc/Hz,杂散为-32.64 dB。该锁相环完全集成在联华电子0.18μm芯片中处理,占据698μm×848μm有效芯片组面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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