{"title":"Low Power Device Phase Locked Loop with Gm-Boosted Charge Pump and ESD Protection","authors":"W. Lai, Wei-Te Liu, Yan-Cu Lin, S. Jang","doi":"10.1109/EDSSC.2019.8754354","DOIUrl":null,"url":null,"abstract":"This article presents a low consumption phase locked loop (PLL) with electrostatic discharge (ESD) and use gain-boosted charge pump organization and a divided by 48 pulse swallow dividers. By gain-boosted technique can efficient to reduce the PLL reference spurs. The PLL consume of power is 6mW from 1.8V souring. The phase noise of the PLL is - 86.71 dBc/Hz at 1MHz offset and spurs are -32.64 dB. The PLL fully integrated and processing in UMC 0.18μm and it occupies 698μm×848μm active chipset area.","PeriodicalId":183887,"journal":{"name":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2019.8754354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This article presents a low consumption phase locked loop (PLL) with electrostatic discharge (ESD) and use gain-boosted charge pump organization and a divided by 48 pulse swallow dividers. By gain-boosted technique can efficient to reduce the PLL reference spurs. The PLL consume of power is 6mW from 1.8V souring. The phase noise of the PLL is - 86.71 dBc/Hz at 1MHz offset and spurs are -32.64 dB. The PLL fully integrated and processing in UMC 0.18μm and it occupies 698μm×848μm active chipset area.