{"title":"A low-noise CMOS receiver frontend for MRI","authors":"J. Anders, G. Boero","doi":"10.1109/BIOCAS.2008.4696900","DOIUrl":null,"url":null,"abstract":"In this paper a novel architecture for an integrated receiver front-end for micro magnetic resonance imaging (micro-MRI) applications is described. While the chip consumes only 9 mA supply current (4 mA in the LNA and 5 mA in the output buffer) from a 3.3 V power supply, it has a measured input referred noise density of only 0.6 nV/radic(Hz). The receiver consists of a reception coil, an on-chip tuning capacitor, a low-noise amplifier, and a 50 Omega output buffer. The system is designed for operation in a B0-field of 7 T corresponding to a frequency of 300 MHz. It is implemented in a 0.35 mum CMOS high-voltage process and occupies a chip area of 850 mum times 500 mum.","PeriodicalId":415200,"journal":{"name":"2008 IEEE Biomedical Circuits and Systems Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Biomedical Circuits and Systems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIOCAS.2008.4696900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
In this paper a novel architecture for an integrated receiver front-end for micro magnetic resonance imaging (micro-MRI) applications is described. While the chip consumes only 9 mA supply current (4 mA in the LNA and 5 mA in the output buffer) from a 3.3 V power supply, it has a measured input referred noise density of only 0.6 nV/radic(Hz). The receiver consists of a reception coil, an on-chip tuning capacitor, a low-noise amplifier, and a 50 Omega output buffer. The system is designed for operation in a B0-field of 7 T corresponding to a frequency of 300 MHz. It is implemented in a 0.35 mum CMOS high-voltage process and occupies a chip area of 850 mum times 500 mum.