A little known benefit of FinFET over Planar MOSFET in highperformance circuits at advanced technology nodes

A. Sachid, C. Hu
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引用次数: 20

Abstract

There is a difference in the nature of parasitic capacitance with electrical width of planar MOSFET and FinFET. This difference can be used to optimize FinFET circuits to achieve lower power dissipation and power density compared to planar MOSFET circuits. To achieve the best results, circuits should be re-optimized considering the parasitics before replacing planar MOSFETs with FinFETs.
在先进技术节点的高性能电路中,FinFET比平面MOSFET有一个鲜为人知的优势
平面MOSFET和FinFET的寄生电容随电宽的性质有所不同。与平面MOSFET电路相比,这种差异可用于优化FinFET电路,以实现更低的功耗和功率密度。为了达到最佳效果,在用finfet取代平面mosfet之前,应考虑寄生效应对电路进行重新优化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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