Temperature Impact on Surface Roughness Modeling for On-Package High Speed Interconnects

C. S. Geyik, Zhichao Zhang, Sean R. Christ, L. Wojewoda, K. Aygün
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引用次数: 6

Abstract

The introduction of new dielectrics and adhesion promotion techniques for future interconnect technology generations is one of the key enablers for lower loss and higher bandwidth. However, temperature increase due to active die or environmental factors can cause variations in material properties and loss, which is required to be included in modeling assumptions to be able to set realistic specifications. High temperature can account for significant increase in dielectric loss and decrease in bulk conductivity. The former becomes less critical considering today's on-package high speed interconnect loss is largely dominated by conductors due to thinner substrate. The latter has a loss impact only at low frequencies due to skin effect, and high frequency conductor loss is considerably influenced by surface roughness. This paper presents a systematic methodology to show temperature impact on surface roughness modeling for on-package high speed interconnects. Correlation to high fidelity insertion loss measurements at different temperatures indicates the roughness correction factor extracted at one temperature does not fit all, necessitating an explicit temperature dependence for surface roughness models.
温度对封装高速互连表面粗糙度建模的影响
为未来的互连技术一代引入新的介电介质和附着力提升技术是实现低损耗和高带宽的关键因素之一。然而,由于活动模具或环境因素导致的温度升高可能导致材料性能和损失的变化,这需要包括在建模假设中,以便能够设定现实的规格。高温会导致介质损耗的显著增加和体积电导率的显著降低。考虑到今天的封装上高速互连损耗主要由更薄的衬底导体主导,前者变得不那么重要。由于集肤效应,后者仅在低频时对损耗有影响,而高频导体损耗受表面粗糙度的影响很大。本文提出了一种系统的方法来显示温度对封装高速互连表面粗糙度建模的影响。与不同温度下高保真插入损耗测量的相关性表明,在一个温度下提取的粗糙度校正因子并不适合所有温度,因此需要对表面粗糙度模型进行明确的温度依赖。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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