J. Slaughter, K. Nagel, R. Whig, S. Deshpande, S. Aggarwal, M. Deherrera, J. Janesky, M. Lin, H. Chia, M. Hossain, S. Ikegawa, F. Mancoff, G. Shimon, J. Sun, M. Tran, T. Andre, S. Alam, F. Poh, J. Lee, Y. Chow, Y. Jiang, H. Liu, C. Wang, S. Noh, T. Tahmasebi, S. Ye, D. Shum
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引用次数: 20
Abstract
In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb, DDR3 ST-MRAM product chip.
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