Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1−xO/ZnO heterostructure

J. Ye, G. Lo, S. Gu, K. Teo
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Abstract

In this work, we demonstrate the layer-by-layer epitaxy of Mg-composition graded ZnMgO/ZnO heterostructure on sapphire substrate by MOVPE technique. The polarization field tailored by the graded heterostructure induces wide electron slabs with high mobility at low temperature. The transport properties and mechanisms have been discussed in details.
极化诱导高迁移率宽电子板的渐变伪晶MgxZn1−xO/ZnO异质结构
在这项工作中,我们展示了利用MOVPE技术在蓝宝石衬底上逐层外延mg成分梯度ZnMgO/ZnO异质结构。由梯度异质结构定制的极化场在低温下诱导出具有高迁移率的宽电子板。详细讨论了其输运性质和输运机理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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