Cold Test Analysis of W-Band Planar Interaction Structure Developed Using Micro Fabrication Techniques

S. Jain, N. Gurjar, K. Singhal, Vishant, N. Kumar, A. Starodubov, N. Ryskin
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Abstract

Vacuum integrated technology has been a favorable choice for the generation of high frequency, high power radiation source because of their ability to handle high power in a compact size. W band (75GHz-110GHz) is considerably a high frequency band and with the increase in the frequency, the wavelength decreases which provides a limitation in developing structures with the desired machining tolerances and surface finish [1]–[3]. Machining tolerances and surface roughness are the important parameters for the propagation of RF signal and can considerably effect the characteristics performance of the vacuum tube [3]–[4]. In this paper a beam wave interaction structure for W-Band frequency has been fabricated in two halves by wire EDM micro fabrication technique and then both the parts were integrated to form a staggered double vane structure. An extensive study of SEM results of the fabricated structure accounts for the dimensional deviation of 10 microns. The interaction structure has a tapered region to ensure low impedance mismatch and better coupling with the WR-10 waveguide ports of VNA. Consequently, the fabricated structure was used to perform the cold test analysis. A waveguide casing was fabricated in accordance with dimensions of WR-10 waveguide for cold test analysis. The interaction structure was assembled inside the casing and connected with the VNA ports. The cold test analysis parameters like S11 and S12 are estimated to be less than −20 dB and near to 0 dB respectively.
利用微加工技术开发的w波段平面相互作用结构的冷试验分析
真空集成技术由于能够在紧凑的尺寸内处理高功率,已成为产生高频、高功率辐射源的有利选择。W波段(75GHz-110GHz)是一个相当高的频段,随着频率的增加,波长会减少,这对开发具有所需加工公差和表面光洁度的结构提供了限制[1]-[3]。加工公差和表面粗糙度是射频信号传播的重要参数,对真空管的特性性能有很大影响[3]-[4]。本文采用线切割微细加工技术,将w波段的波束相互作用结构分成两半,然后将两半组合成交错双叶片结构。对制造结构的SEM结果进行了广泛的研究,说明尺寸偏差为10微米。相互作用结构具有一个锥形区域,以确保低阻抗失配,并与VNA的WR-10波导端口更好地耦合。因此,采用预制结构进行冷试验分析。根据WR-10型波导的尺寸制作了一个波导壳体,用于冷试验分析。交互结构组装在机匣内,并与VNA端口连接。冷试验分析参数S11和S12的估计值分别小于- 20 dB和接近0 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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