D. Ioannou, Z. Chbili, A. Z. Badwan, Q. Li, Y. Yang, A. Salman
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引用次数: 4
Abstract
A new family of well behaved memory cells based on the SOIFED has been described and their operation explained. Their operation relies on modifying the conductivity of the SOI film locally by suitably biasing the gates. They are easier to fabricate and their performance is excellent.
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