Influence of thermal phenomena on characteristics of components of the IGBT module

Abstract

In the paper the results of measurements of the power module illustrating the influence of thermal phenomena on the course of dc characteristics of semiconductor devices contained in this module are presented. The considered module PSI25/06 by Power Sem contains in the common case 2 IGBTs and 2 diodes connected into one branch of an inverter and the thermistor. The influence of changes of the ambient temperature, self-heating phenomena and mutual thermal couplings between semiconductor devices contained in the considered module on their characteristics and on the case temperature of this module is considered.