Effect of dopant concentration on the pore formation of porous silicon on n-type silicon

Abstract

This paper investigated the effect of different doped n-type silicon on pores formation. We found that star-like shape pores occurred when low doped concentration n-type silicon sample was used while high doped concentration produced normal pores hole-shape on the surface. By increasing etching time will cause the neighbouring star-like shape branches to combine and produced bigger pores. Reasons related on this star-like shape pores formation such as the effect of materials impurities, dynamic stress and space charge region effect (SCR) were discussed.