Intermodulation distortion characterisation and analysis of the InGaP/GaAs DHBT

Abstract

The two-tone intermodulation distortion (IMD) characteristic behaviour of microwave InGaP/GaAs double heterojunction bipolar transistors (DHBTs) is studied. This is carried out through measurement, with the results being compared to a simple analytical technique. Both mid frequency (50 MHz) and high frequency (2 GHz) ranges are characterised and the results compared. In addition, the effect of varying input bias levels on the non-linearities has been studied.