A 180-nm SiGe BiCMOS Wideband Amplifier For Cryogenic Applications

Abstract

A wideband amplifier designed in a 180-nm SiGe BiCMOS process technology for cryogenic applications is proposed in this conference paper. By using the common-base stage as the input stage and the emitter follower as the final stage, it can have a wideband input/output matching. The proposed amplifier had been test at room temperature by probing test and in a 4K environment by on-board test and it achieved a peak measured gain of 18.95 dB at room temperature and 25 dB gain at 4K. The measured lowest noise Figure (NF) is between 5.8 to 6.4 dB at room temperature. The proposed circuit draws a 13.52 mW dc-power at room temperature and 12.95 mW at 4K from a 2.0-V supply.