A thermophonic investigation of switching and memory phenomena in thick amorphous chalcogenide films

J. Kotz, M. Shaw
{"title":"A thermophonic investigation of switching and memory phenomena in thick amorphous chalcogenide films","authors":"J. Kotz, M. Shaw","doi":"10.1109/CEIDP.1982.7726531","DOIUrl":null,"url":null,"abstract":"We have employed a thermophonic technique [1] supplemented by numerical analysis in order to study switching and memory effects in the memory-type alloy Ge15 Te18 S2 [2]. The study was initiated because: 1) there was still some doubt as to whether the mechanisms for the initiation of the switching event from a high resistance OFF-state to a low resistance ON-state is predominantly electronic [3-10] or thermal [11-14]; 2) the technique provides a novel way of studying the various phenomena [15] and, for the first time, determining the temperature-time profile during the three phases of the switching cycle.","PeriodicalId":301436,"journal":{"name":"Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1982","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1982-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1982","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP.1982.7726531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

We have employed a thermophonic technique [1] supplemented by numerical analysis in order to study switching and memory effects in the memory-type alloy Ge15 Te18 S2 [2]. The study was initiated because: 1) there was still some doubt as to whether the mechanisms for the initiation of the switching event from a high resistance OFF-state to a low resistance ON-state is predominantly electronic [3-10] or thermal [11-14]; 2) the technique provides a novel way of studying the various phenomena [15] and, for the first time, determining the temperature-time profile during the three phases of the switching cycle.
厚非晶硫化物薄膜中开关和记忆现象的热声学研究
为了研究记忆型合金Ge15 Te18 S2[2]中的开关和记忆效应,我们采用了热声技术[1]和数值分析相结合的方法。启动这项研究的原因是:1)对于从高电阻off状态到低电阻on状态的开关事件的启动机制主要是电子[3-10]还是热[11-14],仍然存在一些疑问;2)该技术提供了一种研究各种现象的新方法[15],并首次确定了开关周期三个阶段的温度-时间分布。
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