Long Carrier Diffusion Length in Two-Dimensional Lead Halide Perovskite Single Crystals

Shreetu Shrestha, Xinxin Li, H. Tsai, Cheng-Hung Hou, Hsin-Hsiang Huang, D. Ghosh, J. Shyue, Leeyih Wang, S. Tretiak, Xuedan Ma, W. Nie
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引用次数: 22

Abstract

SUMMARYRuddlesden-Popper (RP) perovskites are two-dimensional semiconductors for high performance devices. In this work, we report a long in-plane charge carrier diffusion length in 2D RP perovskite single crystals probed by scanning photocurrent microscopy. Carrier diffusion lengths of 7~14 µm are observed when the number of PbI6-2 octahedrons between organic spacers increases from 1 to 3. By detailed light intensity and electric field-dependent photocurrent measurements, we attribute the observed long diffusion length to the dominating dissociated free carrier transport. This is further validated by time-resolved photoluminescence measurements where the decay lifetime increases in the presence of an electric field. From our experiments, we conclude that the in-plane transport in RP perovskites is efficient because of the partial free carrier generation overcoming strong excitonic effects. Our results suggest that semiconducting devices fabricated from RP perovskite single crystals can be as efficient as their 3D counterparts.
二维卤化铅钙钛矿单晶中的长载流子扩散长度
ruddlesden - popper (RP)钙钛矿是用于高性能器件的二维半导体。在这项工作中,我们报道了用扫描光电流显微镜探测二维RP钙钛矿单晶中较长的平面内载流子扩散长度。当有机间隔物之间的PbI6-2八面体数目从1个增加到3个时,载流子扩散长度为7~14µm。通过详细的光强和电场相关的光电流测量,我们将观察到的长扩散长度归因于主要的解离自由载流子输运。通过时间分辨光致发光测量进一步验证了这一点,在电场存在下,衰减寿命增加。从我们的实验中,我们得出结论,RP钙钛矿的平面内输运是有效的,因为部分自由载流子的产生克服了强激子效应。我们的研究结果表明,由RP钙钛矿单晶制造的半导体器件可以像它们的3D对应物一样高效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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