Deep-submicron MOSFET modeling for circuit simulation

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496374

M. Jeng, Zhihong Liu, Yuhua Cheng

引用次数: 1

Abstract

This paper describes recent activities and trends in MOSFET modeling. Both the DC and AC aspects of MOSFET models are covered. Due to the more stringent requirements, test procedures for both analog and digital applications have been proposed. Existing SPICE models are evaluated against these tests. In particular, BSIM3 and MOS9, the two mostly discussed candidates for the standard deep-submicron MOSFET model, are compared.

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电路仿真的深亚微米MOSFET建模

本文介绍了MOSFET建模的最新活动和趋势。涵盖了MOSFET模型的直流和交流方面。由于更严格的要求，已经提出了模拟和数字应用的测试程序。现有的SPICE模型将根据这些测试进行评估。特别地，比较了BSIM3和MOS9这两种讨论最多的标准深亚微米MOSFET模型的候选器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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