On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs

Abstract

Hot-carrier effects are thoroughly investigated in deep submicron Nand P-channel SOI MOSFET. A saturation phenomenon relative to the initial power time-dependent law can be observed for long stress time. In this paper, various lifetime prediction methods in the saturation regime are proposed and compared. The gate length dependence of the maximal drain biases in order to obtain a 10 years lifetime is also addressed with these various extrapolation techniques.