Theoretical study of the intensity dependence of total effective trap density in photorefractive crystals

Chi Ming-jun, Dou Shuo-xing, Ye Pei-xian
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Abstract

Intensity dependence of the total effective trap density Neff is studied theoretically for the two-centre and the three-charge-state photorefractive crystals. The results show that Neff always increases with increasing intensity in three-charge-state crystals, whereas it has more complicated behaviors in two-centre crystals. When SDγT/STγD is small, Neff increases and tends to saturate with increasing intensity for both type-A and type-B two-centre crystals. When SDγT/STγD is large, Neff increases to a maximum and then decreases a little for type-A crystals and decreases greatly for type-B crystals. The different intensity dependences of Neff in the two types of crystals come from their different level structures.
光折变晶体中总有效阱密度强度依赖性的理论研究
从理论上研究了双中心和三电荷态光折变晶体的总有效阱密度Neff的强度依赖性。结果表明,在三电荷态晶体中,Neff总是随着强度的增加而增加,而在双中心晶体中,Neff的行为更为复杂。当sd - γ t / st - γ d较小时,a型和b型双中心晶体的Neff均随强度的增加而增大并趋于饱和。当sd - γ t / st - γ d较大时,a型晶体Neff增大到最大值后减小,b型晶体Neff减小较大。两种晶体的内夫强度依赖性的不同来自于它们不同的能级结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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