{"title":"Design of a binary-weighted resistor DAC using tunable linearized floating-gate CMOS resistors","authors":"Erhan Ozalevli, H. Dinç, H. Lo, P. Hasler","doi":"10.1109/CICC.2006.320867","DOIUrl":null,"url":null,"abstract":"We present an implementation of a 4-bit binary-weighted-resistor DAC to be used in quantizers. It is built by using tunable floating-gate CMOS resistors, which exploit the capacitive coupling and voltage storage capabilities of floating-gate transistors and employ scaled-gate linearization technique to suppress the MOSFET nonlinearities. The resistance of these resistors drifts 1.6 middot 10-3% over the period of 10 years at 25degC. By using these resistors, 15-bit accurate DAC is implemented in 0.5mum CMOS process","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320867","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
We present an implementation of a 4-bit binary-weighted-resistor DAC to be used in quantizers. It is built by using tunable floating-gate CMOS resistors, which exploit the capacitive coupling and voltage storage capabilities of floating-gate transistors and employ scaled-gate linearization technique to suppress the MOSFET nonlinearities. The resistance of these resistors drifts 1.6 middot 10-3% over the period of 10 years at 25degC. By using these resistors, 15-bit accurate DAC is implemented in 0.5mum CMOS process
我们提出了一个用于量化器的4位二进制加权电阻DAC的实现。该电路采用可调浮栅CMOS电阻器,利用浮栅晶体管的电容耦合和电压存储能力,采用标度栅线性化技术抑制MOSFET的非线性。在25℃下,这些电阻的电阻在10年内漂移1.6中点10-3%。通过使用这些电阻,在0.5 μ m CMOS工艺中实现了15位精确的DAC