{"title":"Etching of p-type metal contact deposited on GaAs","authors":"Z. Mahmood, S. Bashar","doi":"10.1109/ICTON.2001.934779","DOIUrl":null,"url":null,"abstract":"In this paper, both wet etching and dry etching of metal contacts deposited on GaAs wafer have been described. A /spl sim/240 nm thin layer of p-type contact was formed on GaAs bulk wafer using Au-Zn-Au layer. Wet etching of the metal contact was done using KI-I/sub 2/ and HNO/sub 3/-HCl etch solutions and the dry etching was performed in an argon plasma reactive ion etcher chamber. Results are discussed for both the etching processes.","PeriodicalId":301018,"journal":{"name":"Proceedings of 2001 3rd International Conference on Transparent Optical Networks (IEEE Cat. No.01EX488)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2001 3rd International Conference on Transparent Optical Networks (IEEE Cat. No.01EX488)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2001.934779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, both wet etching and dry etching of metal contacts deposited on GaAs wafer have been described. A /spl sim/240 nm thin layer of p-type contact was formed on GaAs bulk wafer using Au-Zn-Au layer. Wet etching of the metal contact was done using KI-I/sub 2/ and HNO/sub 3/-HCl etch solutions and the dry etching was performed in an argon plasma reactive ion etcher chamber. Results are discussed for both the etching processes.