A physical analytical model for LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices

Abstract

An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices. The model is derived from basic semiconductor charge analysis. In this model, the Chang-Fetterman equation is used to approximate the electron drift velocity versus electric field. Excellent agreement with experimental results is shown.