Thermopower and electrical resistivity of undoped and co-doped /spl beta/-FeSi2 single crystals and /spl beta/-FeSi2+x thin films

Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96 Pub Date : 1996-03-26 DOI:10.1109/ICT.1996.553256

A. Heinrich, A. Burkov, C. Gladun, G. Behr, K. Herz, J. Schumann, H. Powalla

引用次数: 5

Abstract

Thermopower and electrical resistivity have been investigated of /spl beta/-FeSi/sub 2/ single crystals and /spl beta/-FeSi/sub 2+x/ thin films in the temperature range from 40 K to 1200 K. The single crystals were grown by chemical transport reaction with source material of different purity and with a Si/Fe ratio between 1.5 and 2.5 to obtain crystals from the Fe-rich and Si-rich boundaries of the homogeneity range, respectively. The undoped and co-doped thin films have been prepared in the range -0.06

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未掺杂和共掺杂/spl β /-FeSi2单晶和/spl β /-FeSi2+x薄膜的热功率和电阻率

研究了/spl β /-FeSi/sub 2/单晶和/spl β /-FeSi/sub 2+x/薄膜在40 ~ 1200 K温度范围内的热功率和电阻率。采用不同纯度的原料，在Si/Fe比值为1.5 ~ 2.5的条件下，通过化学传递反应生长单晶，得到均匀性范围内富铁边界和富硅边界的单晶。用共蒸发法制备了在-0.06

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