Power comparison between high-speed electrical and optical interconnects for inter-chip communication

Hoyeol Cho, P. Kapur, Krishna C. Saraswat
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引用次数: 17

Abstract

Power dissipation between electrical and optical interconnects for high-speed inter-chip communication is compared. A power minimization strategy for optical interconnects is developed and its scaling trends are shown. Optical interconnect when compared with the state-of-the-art electrical interconnect yields lower power beyond a critical length (43cm at 6Gb/s and 100nm technology node). The critical length is fully characterized as a function of system requirements (bit rate and bit-error rate) and interconnect's end-device parameters (detector capacitance, receiver sensitivity and offset). Higher bit rates yield lower critical lengths making optical interconnects more favorable in the future.
用于芯片间通信的高速电光互连的功率比较
比较了高速芯片间通信中光电互连的功耗。提出了一种用于光互连的功率最小化策略,并给出了该策略的缩放趋势。与最先进的电互连相比,光互连在超过临界长度(6Gb/s和100nm技术节点下43cm)时的功耗更低。临界长度完全表征为系统要求(比特率和误码率)和互连终端设备参数(检测器电容、接收器灵敏度和偏移)的函数。更高的比特率产生更低的临界长度,使光学互连在未来更加有利。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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