{"title":"Power comparison between high-speed electrical and optical interconnects for inter-chip communication","authors":"Hoyeol Cho, P. Kapur, Krishna C. Saraswat","doi":"10.1109/IITC.2004.1345710","DOIUrl":null,"url":null,"abstract":"Power dissipation between electrical and optical interconnects for high-speed inter-chip communication is compared. A power minimization strategy for optical interconnects is developed and its scaling trends are shown. Optical interconnect when compared with the state-of-the-art electrical interconnect yields lower power beyond a critical length (43cm at 6Gb/s and 100nm technology node). The critical length is fully characterized as a function of system requirements (bit rate and bit-error rate) and interconnect's end-device parameters (detector capacitance, receiver sensitivity and offset). Higher bit rates yield lower critical lengths making optical interconnects more favorable in the future.","PeriodicalId":148010,"journal":{"name":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2004.1345710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
Power dissipation between electrical and optical interconnects for high-speed inter-chip communication is compared. A power minimization strategy for optical interconnects is developed and its scaling trends are shown. Optical interconnect when compared with the state-of-the-art electrical interconnect yields lower power beyond a critical length (43cm at 6Gb/s and 100nm technology node). The critical length is fully characterized as a function of system requirements (bit rate and bit-error rate) and interconnect's end-device parameters (detector capacitance, receiver sensitivity and offset). Higher bit rates yield lower critical lengths making optical interconnects more favorable in the future.