Strained Si nanowire tunnel FETs and inverters

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) Pub Date : 2013-10-01 DOI:10.1109/E3S.2013.6705867

Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl

引用次数: 0

Abstract

Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].

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应变硅纳米线隧道场效应管和逆变器

陡坡器件，如隧道场效应管(tfet)，在300K时提供小的亚阈值斜率(SS) < 60mV/dec和低关断，从而实现低动态和静态功耗。模拟结果表明，在相同待机功率和开关能量下，tfet在VDD ~ 0.3 V时的性能比mosfet高(x8)[1]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)

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