{"title":"Surface modification of single-crystal silicon by hybrid laser treatment","authors":"Xinxin Li, Zhi-Yong Cui, Y. Guan","doi":"10.1117/12.2626902","DOIUrl":null,"url":null,"abstract":"In this paper, recent work on picosecond and nanosecond hybrid laser treatment of mechanically sawed single-crystal silicon wafer is presented. Surface morphology, surface roughness and phase development has been analyzed by 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), and scanning electron microscope (SEM). Results show that as-received surface defects including SiO2 layer and saw-mark defects have been significantly reduced, while average surface roughness has been decreased. No obvious damages such as micro-cracks and micropores have been observed at the laser-treated surface. Moreover, residual stress and electrical resistivity of laser-treated surface has been measured, respectively. The insights obtained in this work provide a facile method to improve surface quality of mechanically machined silicon wafer.","PeriodicalId":422113,"journal":{"name":"Photonics and Optoelectronics Meetings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photonics and Optoelectronics Meetings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2626902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, recent work on picosecond and nanosecond hybrid laser treatment of mechanically sawed single-crystal silicon wafer is presented. Surface morphology, surface roughness and phase development has been analyzed by 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), and scanning electron microscope (SEM). Results show that as-received surface defects including SiO2 layer and saw-mark defects have been significantly reduced, while average surface roughness has been decreased. No obvious damages such as micro-cracks and micropores have been observed at the laser-treated surface. Moreover, residual stress and electrical resistivity of laser-treated surface has been measured, respectively. The insights obtained in this work provide a facile method to improve surface quality of mechanically machined silicon wafer.