Surface modification of single-crystal silicon by hybrid laser treatment

Xinxin Li, Zhi-Yong Cui, Y. Guan
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引用次数: 1

Abstract

In this paper, recent work on picosecond and nanosecond hybrid laser treatment of mechanically sawed single-crystal silicon wafer is presented. Surface morphology, surface roughness and phase development has been analyzed by 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), and scanning electron microscope (SEM). Results show that as-received surface defects including SiO2 layer and saw-mark defects have been significantly reduced, while average surface roughness has been decreased. No obvious damages such as micro-cracks and micropores have been observed at the laser-treated surface. Moreover, residual stress and electrical resistivity of laser-treated surface has been measured, respectively. The insights obtained in this work provide a facile method to improve surface quality of mechanically machined silicon wafer.
混合激光处理单晶硅的表面改性
本文介绍了皮秒和纳秒混合激光处理机械锯单晶硅片的最新研究进展。采用三维激光扫描共聚焦显微镜(LSCM)、x射线衍射仪(XRD)和扫描电镜(SEM)分析了材料的表面形貌、表面粗糙度和相发育情况。结果表明:表面接收缺陷(包括SiO2层和锯痕缺陷)明显减少,平均表面粗糙度降低;在激光处理表面未观察到明显的微裂纹、微孔等损伤。此外,还测量了激光处理表面的残余应力和电阻率。本研究为提高机械加工硅片的表面质量提供了一种简便的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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