A bandgap reference circuit with temperature compensation

Wang Shaodong, W. Shuai
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Abstract

These After analyzing the basic principle of bandgap reference(BGR), a differential pair of npn transistors with an emitter area ratio are used to produce a current which is proportional to absolute temperature (PTAT) in this paper. A relatively simple current compensation methods is illustrated to optimize the temperature characteristic of the BGR. This BGR has been verified in 0. 8um BiCMOS process library and achieves a temperature coefficient (TC) of 5. 98ppm/ °C with a temperature range from -50 °C to 150 °C at 5V power supply, the variation in the output of BGR is less than 1. 7mV with a power supply range from 3V to 10V, and a lower power dissipation.
带温度补偿的带隙参考电路
本文在分析带隙基准(BGR)基本原理的基础上,利用具有发射极面积比的差分npn晶体管对产生与绝对温度(PTAT)成正比的电流。提出了一种较为简单的电流补偿方法来优化BGR的温度特性。该BGR已在0中得到验证。8um BiCMOS工艺库,实现温度系数(TC)为5。在-50°C ~ 150°C的温度范围内,5V电源下,BGR的输出变化小于1。7mV,供电范围3V ~ 10V,功耗更低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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