Power sequence free 400Mbps 90µW 6000µm2 1.8V–3.3V stress tolerant I/O buffer in 28nm CMOS

Vinod Kumar, Mohd. Rizvi
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引用次数: 3

Abstract

A power sequence independent I/O (Input/Output) buffer architecture for high voltage (up to 3.6V) application by using low voltage (1.8V) devices is proposed. In this a power sequence free, area and power efficient CRVG (Configurable Reference Voltage Generator) generates the internal reference voltage for the stacked devices to protect them from voltage stress. The proposed I/O buffer is designed in 28nm CMOS process by using standard 32Å gate-oxide devices. The silicon results confirmed up to 200 MHz successful operation in multiple (1.8V, 2.5V, 3.0V, 3.3V) supply range.
无电源序列400Mbps 90µW 6000µm2 1.8V-3.3V耐应力I/O缓冲器,28nm CMOS
提出了一种利用低电压(1.8V)器件实现高电压(高达3.6V)应用的独立于电源序列的I/O(输入/输出)缓冲结构。在这种情况下,一个无功率序列,面积和功率效率高的CRVG(可配置参考电压发生器)为堆叠设备产生内部参考电压,以保护它们免受电压应力的影响。所提出的I/O缓冲器采用标准的32Å栅极氧化物器件,采用28nm CMOS工艺设计。硅结果证实,在多个(1.8V, 2.5V, 3.0V, 3.3V)电源范围内,高达200 MHz的成功操作。
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